Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy
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چکیده
منابع مشابه
Surface Studied with Auger Electron Spectroscopy
We present an Auger electron spectroscopy (AES) study of the adsorption of nitric oxide (NO) on a dean Si(100)2 × 1 surface at 300 and 550 K. Accurate measurements reveal wall resolved fine structure at Auger Si L2.3 w transitions at 62 and 83 eV. These peaks can be attributed to Si-O and Si-N bonds. Furthermore, it is argued that the broadening in the SiLi2,~W Auger transition at 83 eV at 300 ...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1999
ISSN: 1092-5783
DOI: 10.1557/s1092578300002350